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| BFU730LX_15 Datasheet, PDF (5/13 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor | |||
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NXP Semiconductors
BFU730LX
NPN wideband silicon germanium RF transistor
Table 9. Characteristics â¦continued
Tj = 25 ï°C unless otherwise specified; measurements done on characterization boards.
Symbol Parameter
Conditions
Gp(max) maximum power gain
IC = 5 mA; VCE = 3 V; Tamb = 25 ï°C
f = 1.8 GHz
f = 6 GHz
IC = 10 mA; VCE = 3 V; Tamb = 25 ï°C
f = 1.8 GHz
f = 6 GHz
IC = 25 mA; VCE = 3 V; Tamb = 25 ï°C
f = 1.8 GHz
f = 6 GHz
ï¼s21ï¼2
insertion power gain
IC = 5 mA; VCE = 3 V; Tamb = 25 ï°C
f = 1.8 GHz
f = 6 GHz
IC = 10 mA; VCE = 3 V; Tamb = 25 ï°C
f = 1.8 GHz
f = 6 GHz
IC = 25 mA; VCE = 3 V; Tamb = 25 ï°C
f = 1.8 GHz
f = 6 GHz
NFmin minimum noise figure
IC = 5 mA; VCE = 3 V; ïS = ïopt; Tamb = 25 ï°C
f = 1.8 GHz
f = 6 GHz
IC = 10 mA; VCE = 3 V; ïS = ïopt; Tamb = 25 ï°C
f = 1.8 GHz
f = 6 GHz
IC = 25 mA; VCE = 3 V; ïS = ïopt; Tamb = 25 ï°C
f = 1.8 GHz
f = 6 GHz
PL(1dB) output power at 1 dB gain
compression
IC = 5 mA; VCE = 3 V; ZS = ZL = 50 ï;
Tamb = 25 ï°C
f = 1.8 GHz
f = 6 GHz
IC = 10 mA; VCE = 3 V; ZS = ZL = 50 ï;
Tamb = 25 ï°C
f = 1.8 GHz
f = 6 GHz
IC = 25 mA; VCE = 3 V; ZS = ZL = 50 ï;
Tamb = 25 ï°C
f = 1.8 GHz
f = 6 GHz
Min Typ Max Unit
[1]
- 22.0 - dB
- 15.0 - dB
[1]
- 23.6 - dB
- 15.7 - dB
[1]
- 24.5 - dB
- 15.8 - dB
- 19.3 - dB
- 11.1 - dB
- 21.3 - dB
- 12.0 - dB
- 22.3 - dB
- 12.5 - dB
- 0.55 - dB
- 0.75 - dB
- 0.7 - dB
- 0.9 - dB
- 1.1 - dB
- 1.2 - dB
- ï3.7 - dBm
- ï1.6 - dBm
- 3.5 - dBm
- 5.4 - dBm
- 11.7 - dBm
- 12.7 - dBm
BFU730LX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 8 May 2013
© NXP B.V. 2013. All rights reserved.
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