BFU730LX_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

NXP Semiconductors
BFU730LX
NPN wideband silicon germanium RF transistor

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V_CE = 3 V; T_amb = 25 C.
(1) f = 0.9 GHz
(2) f = 1.8 GHz
(3) f = 2.4 GHz
(4) f = 3.0 GHz
(5) f = 4.0 GHz
(6) f = 5.0 GHz
(7) f = 6.0 GHz
Fig 4. Insertion power gain as a function of collector
current; typical value
I_C = 25 mA; V_CE = 3 V; T_amb = 25 C.
Fig 5. Gain as a function of frequency; typical values
BFU730LX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 8 May 2013
© NXP B.V. 2013. All rights reserved.
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