BFU730LX_15 Datasheet, PDF (4/13 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

NXP Semiconductors
BFU730LX
NPN wideband silicon germanium RF transistor
7. Recommended operating conditions
Table 7.
Symbol
T_j
I_C
Recommended operating conditions
Parameter
Conditions
junction temperature
collector current
8. Thermal characteristics
Table 8.
Symbol
R_th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Min Typ Max Unit
40 -
+125 C
-
-
30
mA
Conditions
Typ Unit
250 K/W

3_WRW
P:

DDD









7_VSƒ&
Fig 1. Total supply current as a function of solder point temperature
9. Characteristics
Table 9. Characteristics
T_j = 25 C unless otherwise specified; measurements done on characterization boards.
Symbol Parameter
Conditions
V_(BR)CBO collector-base breakdown voltage I_C = 2.5 A; I_E = 0 mA
V_(BR)CEO collector-emitter breakdown voltage I_C = 1 mA; I_B = 0 mA
I_C
collector current
I_CBO
collector-base cut-off current
I_E = 0 mA; V_CB = 4.5 V
h_FE
DC current gain
I_C = 2 mA; V_CE = 2 V
C_CE
collector-emitter capacitance
C_EB
emitter-base capacitance
V_CE = 2 V; f = 1 MHz
V_EB = 0.5 V; f = 1 MHz
C_CB
collector-base capacitance
f_T
transition frequency
V_CB = 2 V; f = 1 MHz
I_C = 25 mA; V_CE = 3 V; f = 2 GHz; T_amb = 25 C
BFU730LX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 8 May 2013
Min Typ Max Unit
10 - - V
3.0 - - V
- 5 30 mA
- - 100 nA
205 380 555
- 145 - fF
- 310 - fF
- 84 - fF
- 53 - GHz
© NXP B.V. 2013. All rights reserved.
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