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| BFU730LX_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor | |||
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NXP Semiconductors
BFU730LX
NPN wideband silicon germanium RF transistor
Table 9. Characteristics â¦continued
Tj = 25 ï°C unless otherwise specified; measurements done on characterization boards.
Symbol Parameter
Conditions
IP3o
output third-order intercept point
IC = 5 mA; VCE = 3 V; ZS = ZL = 50 ï;
Tamb = 25 ï°C
f = 1.8 GHz
f = 6 GHz
IC = 10 mA; VCE = 3 V; ZS = ZL = 50 ï;
Tamb = 25 ï°C
f = 1.8 GHz
f = 6 GHz
IC = 25 mA; VCE = 3 V; ZS = ZL = 50 ï;
Tamb = 25 ï°C
f = 1.8 GHz
f = 6 GHz
[1] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG.
Min Typ Max Unit
- 14.7 - dBm
- 19.0 - dBm
- 23.8 - dBm
- 25.3 - dBm
- 25.5 - dBm
- 26.9 - dBm
500
hFE
400
001aam854
300
200
100
0
0
10
20
30
IC (mA)
Fig 2.
VCE = 2 V; Tamb = 25 ï°C.
DC current gain as a function of collector
current; typical values
I7
*+]
DDD
,& P$
Fig 3.
VCE = 2.5 V; f = 2 GHz; Tamb = 25 ï°C.
Transition frequency as a function of collector
current; typical values
BFU730LX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 8 May 2013
© NXP B.V. 2013. All rights reserved.
6 of 13
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