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| BFU730LX_15 Datasheet, PDF (2/13 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor | |||
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NXP Semiconductors
BFU730LX
NPN wideband silicon germanium RF transistor
1.4 Quick reference data
Table 1. Quick reference data
Tj = 25 ï°C unless otherwise specified.
Symbol Parameter
Conditions
VCB
collector-base voltage open emitter
VCE
collector-emitter voltage open base
shorted base
VEB
emitter-base voltage
open collector
IC
collector current
Ptot
total power dissipation Tsp ï£ 110 ï°C
hFE
DC current gain
IC = 2 mA; VCE = 2 V;
Tj = 25 ï°C
fT
transition frequency
IC = 25 mA; VCE = 3 V;
f = 2 GHz; Tamb = 25 ï°C
Gp(max) maximum power gain
IC = 25 mA; VCE = 3 V;
f = 6 GHz; Tamb = 25 ï°C
NF
noise figure
IC = 5 mA; VCE = 3 V; f = 6
GHz; ïS = ïopt
PL(1dB) output power at 1 dB
gain compression
IC = 25 mA; VCE = 3 V;
ZS = ZL = 50 ï;
f = 1.8 GHz; Tamb = 25 ï°C
Min
-
-
-
-
-
[1] -
205
-
[2] -
-
-
Typ
-
-
-
-
5
-
380
53
15.8
0.75
11.7
Max
10.0
3.0
10.0
1.3
30
160
555
-
-
-
-
Unit
V
V
V
V
mA
mW
GHz
dB
dB
dBm
[1] Tsp is the temperature at the solder point of the emitter lead.
[2] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain (MSG).
2. Pinning information
Table 2.
Pin
1
2
3
Discrete pinning
Description
base
collector
emitter
Simplified outline Graphic symbol
7UDQVSDUHQW
WRSYLHZ
DDD
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
BFU730LX
-
leadless ultra small plastic package; 3 terminals;
body 1 ï´ 0.6 ï´ 0.34 mm
Version
SOT883C
BFU730LX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 8 May 2013
© NXP B.V. 2013. All rights reserved.
2 of 13
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