TDA8596_15 Datasheet, PDF (31/48 Pages) NXP Semiconductors – I2C-bus controlled 4 ´ 45 W power amplifier with symmetrical inputs

NXP Semiconductors
TDA8596
I²C-bus controlled 4 × 45 W power amplifier with symmetrical inputs
Table 17. Characteristics …continued
Refer to test circuit (see Figure 29) at V_P = 14.4 V; R_L = 4 Ω; f = 1 kHz; R_S = 0 Ω; normal mode; unless otherwise specified.
Tested at T_amb = 25 °C; guaranteed for T_amb = −40 °C to +105 °C.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
t_{d(fast_mute)}
fast mute delay time from 10 % to 90 % of output signal;
-
V_STB from 8 V to 1.3 V; V_i = 50 mV; see
Figure 6
0.1
1
ms
t_{(start-Vo(off))}
engine start to output V_P from 14.4 V to 7 V; V_o < 0.5 V; see
off time
Figure 8
-
0.1
1
ms
t_{(start-SVRoff)}
engine start to SVR V_P from 14.4 V to 7 V; V_SVR < 2 V; see
-
40
75
ms
off time
Figure 8
I²C-bus interface^[4]
V_IL
LOW-level input
pins SCL and SDA
voltage
-
-
1.5
V
V_IH
HIGH-level input
pins SCL and SDA
voltage
2.3
-
5.5
V
V_OL
LOW-level output
pin SDA; I_L = 5 mA
voltage
-
-
0.4
V
f_SCL
R_ADSEL
SCL clock frequency
resistance on pin
ADSEL
Gain select pin
R_GAINSEL
resistance on pin
GAINSEL
Diagnostic
V_OL(DIAG)
V_{O(offset_det)}
THD_clip
LOW-level output
voltage on pin DIAG
output voltage at
offset detection
total harmonic
distortion clip
detection level
I²C-bus address A[6:0] = 110 1100
I²C-bus address A[6:0] = 110 1101
I²C-bus address A[6:0] = 110 1111
legacy mode
legacy mode (I²C-bus off)
26 dB gain; normal mode
16 dB gain; line driver mode
fault condition; I_DIAG = 1 mA
V_P > 10 V
IB2[D7:D6] = 10; level 10 %
IB2[D7:D6] = 01; level 5 %
-
400
-
kHz
155
-
-
kΩ
42
51
57
kΩ
7
10
15
kΩ
-
-
0.5
kΩ
-
-
20
-
5
kΩ
-
kΩ
-
-
0.3
V
±1.3 ±1.55 ± 2.0 V
5
10
16
%
3
5
7
%
IB2[D7:D6] = 00; level 2 %
1
2
3
%
∆THD_clip
total harmonic
distortion clip
detection level
variation
between IB2[D7:D6] = 10 and
IB2[D7:D6] = 01 (level between 10 %
and 5 %)
between IB2[D7:D6] = 01 and
IB2[D7:D6] = 00 (level between 5 % and
2 %)
T_j(AV)(pwarn)
pre-warning average IB3[D4] = 0
junction temperature _{IB3[D4] = 1}
T_{j(AV)(G(−0.5dB))} average junction
V_i = 0.05 V
temperature for 0.5 dB
gain reduction
1
4
8
%
1
3.5
6
%
135
145
155
°C
112
122
132
°C
150
155
160
°C
TDA8596_2
Product data sheet
Rev. 02 — 8 November 2007
© NXP B.V. 2007. All rights reserved.
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