TDA8596_15 Datasheet, PDF (28/48 Pages) NXP Semiconductors – I2C-bus controlled 4 ´ 45 W power amplifier with symmetrical inputs

NXP Semiconductors
TDA8596
I²C-bus controlled 4 × 45 W power amplifier with symmetrical inputs
Table 15. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
T_amb
V_(prot)
ambient temperature
−40
protection voltage
AC and DC short circuit
-
voltage of output pins
and across the load
V_x
voltage on pin x
SCL and SDA
0
inputs, SVR and DIAG
0
STB
[1] ₀
P_tot
total power dissipation T_case = 70 °C
-
V_esd
electrostatic discharge human body model;
-
voltage
C = 100 pF; R_s = 1.5 kΩ
machine model;
-
C = 200 pF; R_s = 10 Ω;
L = 0.75 µH
[1] 10 kΩ series resistance if connected to V_P.
10. Thermal characteristics
Max Unit
+105 °C
V_P
V
6.5
V
13
V
24
V
80
W
2000 V
200
V
Table 16. Thermal characteristics
Symbol Parameter
Conditions Typ
R_th(j-c)
thermal resistance from junction to case
1
R_th(j-a)
thermal resistance from junction to ambient
35
Unit
K/W
K/W
11. Characteristics
Table 17. Characteristics
Refer to test circuit (see Figure 29) at V_P = 14.4 V; R_L = 4 Ω; f = 1 kHz; R_S = 0 Ω; normal mode; unless otherwise specified.
Tested at T_amb = 25 °C; guaranteed for T_amb = −40 °C to +105 °C.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
Supply voltage behavior
V_P
I_q
I_stb
V_O
V_P(low)(mute)
supply voltage
quiescent current
standby current
output voltage
low supply voltage
mute
R_L = 4 Ω
R_L = 2 Ω
no load
V_STB = 0.4 V
with rising supply voltage
with falling supply voltage
8
[1] ₈
-
-
6.7
6.9
6.3
14.4 18
V
14.4 16
V
270
400
mA
4
15
µA
7
7.2
V
7.5
8
V
6.8
7.4
V
∆V_P(low)(mute) low supply voltage
mute hysteresis
0.1
0.7
1
V
V_th(ovp)
overvoltage protection
threshold voltage
18
20
22
V
V_hr
headroom voltage
when headroom protection is activated;
1.1
1.6
2.0
V
see Figure 7
TDA8596_2
Product data sheet
Rev. 02 — 8 November 2007
© NXP B.V. 2007. All rights reserved.
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