PSMN1R5-40PS Datasheet, PDF (9/14 Pages) NXP Semiconductors – NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

NXP Semiconductors
PSMN1R5-40PS
N-channel 40 V 1.6 mΩ standard level MOSFET in TO220
10^{- 1}
03aa35
2 .5
I_D
(A)
a
10^{- 2}
min typ max
2
003a a f322
10^{- 3}
1 .5
10^{- 4}
1
10^{- 5}
0 .5
10^{- 6}
0
2
4
6
V_GS (V)
Fig. 12. Sub-threshold drain current as a function of
gate-source voltage
0
-6 0
0
60
120
180
Tj ( C)
Fig. 13. Normalized drain-source on state resistance
factor as a function of junction temperature
8
R_DSon
(mΩ)
6
4
2
0
0
003aaf326
4.6
4.8
V_GS(V) = 5
5.2
10
20
20
40
60 _ID(A) 80
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig. 15. Gate charge waveform definitions
Fig. 14. Drain-source on-state resistance as a function
of drain current; typical values
PSMN1R5-40PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 July 2013
© NXP N.V. 2013. All rights reserved
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