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| PSMN1R5-40PS Datasheet, PDF (6/14 Pages) NXP Semiconductors – NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8) | |||
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NXP Semiconductors
PSMN1R5-40PS
N-channel 40 V 1.6 m⦠standard level MOSFET in TO220
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = -55 °C;
voltage
Fig. 11
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 11
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 12; Fig. 11
IDSS
drain leakage current VDS = 40 V; VGS = 0 V; Tj = 25 °C
VDS = 40 V; VGS = 0 V; Tj = 175 °C
IGSS
gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 100 °C;
resistance
Fig. 13
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 13
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 14
RG
internal gate
f = 1 MHz
resistance (AC)
Dynamic characteristics
QG(tot)
total gate charge
ID = 0 A; VDS = 0 V; VGS = 10 V
ID = 75 A; VDS = 20 V; VGS = 10 V;
QGS
gate-source charge
Tj = 25 °C; Fig. 15; Fig. 16
QGS(th)
pre-threshold gate-
source charge
QGS(th-pl)
post-threshold gate-
source charge
QGD
gate-drain charge
VGS(pl)
gate-source plateau
voltage
ID = 75 A; VDS = 20 V; Tj = 25 °C;
Fig. 15; Fig. 16
Ciss
input capacitance
VDS = 20 V; VGS = 0 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; Fig. 17
Min Typ Max Unit
36
-
40
-
-
-
-
V
-
V
4.6 V
1
-
-
V
2
3
4
V
-
0.02 10
µA
-
250 500 µA
-
2
100 nA
-
2
100 nA
-
1.9 2.3 mΩ
-
2.6 3.2 mΩ
[1]
-
1.3 1.6 mΩ
-
1.1 -
Ω
-
133 -
nC
-
136 -
nC
-
52
-
nC
-
30
-
nC
-
22.5 -
nC
-
32
-
nC
-
6.1 -
V
-
9710 -
pF
-
2042 -
pF
PSMN1R5-40PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 July 2013
© NXP N.V. 2013. All rights reserved
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