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| PSMN1R5-40PS Datasheet, PDF (2/14 Pages) NXP Semiconductors – NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8) | |||
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NXP Semiconductors
PSMN1R5-40PS
N-channel 40 V 1.6 m⦠standard level MOSFET in TO220
Symbol
Parameter
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
Conditions
VGS = 10 V; Tj(init) = 25 °C; ID = 150 A;
Vsup ⤠40 V; unclamped; RGS = 50 Ω;
tp = 0.1 ms; Fig. 3
[1] Continuous current is limited by package
[2] Measured 3 mm from package.
Min Typ Max Unit
-
-
1.1 J
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
G
gate
2
D
drain
3
S
source
mb
D
drain
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
123
TO-220AB (SOT78)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN1R5-40PS
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
7. Marking
Table 4. Marking codes
Type number
PSMN1R5-40PS
Marking code
PSMN1R5-40PS
PSMN1R5-40PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 July 2013
© NXP N.V. 2013. All rights reserved
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