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| PSMN1R5-40PS Datasheet, PDF (3/14 Pages) NXP Semiconductors – NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8) | |||
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NXP Semiconductors
PSMN1R5-40PS
N-channel 40 V 1.6 m⦠standard level MOSFET in TO220
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
drain-source voltage
Tj ⥠25 °C; Tj ⤠175 °C
VDGR
drain-gate voltage
Tj ⥠25 °C; Tj ⤠175 °C; RGS = 20 kΩ
VGS
gate-source voltage
ID
drain current
VGS = 10 V; Tmb = 100 °C; Fig. 1
[1]
VGS = 10 V; Tmb = 25 °C; Fig. 1
[1]
IDM
peak drain current
pulsed; tp ⤠10 µs; Tmb = 25 °C; Fig. 4
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
Tstg
storage temperature
Tj
junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
IS
source current
Tmb = 25 °C
[1]
ISM
peak source current
pulsed; tp ⤠10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 150 A;
Vsup ⤠40 V; unclamped; RGS = 50 Ω;
tp = 0.1 ms; Fig. 3
[1] Continuous current is limited by package
Min Max Unit
-
40
V
-
40
V
-20 20
V
-
150 A
-
150 A
-
1301 A
-
338 W
-55 175 °C
-55 175 °C
-
260 °C
-
150 A
-
1301 A
-
1.1 J
PSMN1R5-40PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 July 2013
© NXP N.V. 2013. All rights reserved
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