PSMN1R5-40PS Datasheet, PDF (8/14 Pages) NXP Semiconductors – NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

NXP Semiconductors
8
R_DSon
(mΩ)
6
4
PSMN1R5-40PS
N-channel 40 V 1.6 mΩ standard level MOSFET in TO220
003aaf318
80
10 6.0 5.2 5.0
I_D
(A)
60
40
003aaf319
V_GS(V) = 4.8
4.7
4.6
2
20
4.5
0
4
8
12
16
20
V_GS(V)
Fig. 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
0
0
0.25
0.5
0.75 _VDS(V) 1
Fig. 9. Output characteristics: drain current as a
function of drain-source voltage; typical values
18000
C
(pF)
14000
10000
6000
003aaf320
C_iss
C_rss
5
V_GS(th)
(V)
4
3
2
1
003aad280
max
typ
min
2000
1
10
V_GS (V)
10²
Fig. 10. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
0
- 60
0
60
120
180
T_j (°C)
Fig. 11. Gate-source threshold voltage as a function of
junction temperature
PSMN1R5-40PS
Product data sheet
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15 July 2013
© NXP N.V. 2013. All rights reserved
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