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| PSMN1R5-40PS Datasheet, PDF (7/14 Pages) NXP Semiconductors – NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8) | |||
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NXP Semiconductors
PSMN1R5-40PS
N-channel 40 V 1.6 m⦠standard level MOSFET in TO220
Symbol
Parameter
Conditions
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 20 V; RL = 0.8 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω; Tj = 25 °C
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 18
trr
reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C
Qr
recovered charge
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C
[1] Measured 3 mm from package.
200
gfs
(S)
150
003aaf316
75
ID
(A)
60
Min Typ Max Unit
-
994 -
pF
-
45
-
ns
-
66
-
ns
-
111 -
ns
-
53
-
ns
-
0.8 1.2 V
-
64
-
ns
-
117 -
nC
003aaf317
45
100
30
50
Tj = 175 °C
Tj = 25 °C
15
0
0
15
30
45 ID (A) 60
Fig. 6. Forward transconductance as a function of
drain current; typical values
0
0
2
4 VGS(V) 6
Fig. 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
PSMN1R5-40PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 July 2013
© NXP N.V. 2013. All rights reserved
7 / 14
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