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| PSMN1R5-40PS Datasheet, PDF (5/14 Pages) NXP Semiconductors – NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8) | |||
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NXP Semiconductors
PSMN1R5-40PS
N-channel 40 V 1.6 m⦠standard level MOSFET in TO220
104
ID
(A)
103
102
10
1
Limit RDSon = VDS / ID
DC
003aak963
tp = 10 us
100 us
1 ms
10 ms
100 ms
10-1
10-1
1
10
102
VDS (V)
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 5
Vertical in free air
1
Zth(j-mb)
(K/W)
δ = 0.5
10-1
0.2
0.1
0.05
10-2
0.02
Min Typ Max Unit
-
0.22 0.44 K/W
-
60
-
K/W
003aaf327
P
δ=
tp
T
single shot
tp
t
10-3
T
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN1R5-40PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 July 2013
© NXP N.V. 2013. All rights reserved
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