PSMN1R5-40PS Datasheet, PDF (1/14 Pages) NXP Semiconductors – NextPower 25 V & 30 V MOSFETs in LFPAK(Power-SO8)

PSMN1R5-40PS
N-channel 40 V 1.6 mΩ standard level MOSFET in TO220
15 July 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in SOT78 (TO220) using TrenchMOS technology.
Product design and manufacture has been optimized for use in battery operated power
tools.
2. Features and benefits
• High efficiency due to low switching and conduction losses
• Robust construction for demanding applications
• Standard level gate
3. Applications
• Battery-powered tools
• Load switching
• Motor control
• Uninterruptible power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V; Fig. 1
P_tot
total power dissipation T_mb = 25 °C; Fig. 2
Static characteristics
R_DSon
drain-source on-state V_GS = 10 V; I_D = 25 A; T_j = 100 °C;
resistance
Fig. 13
V_GS = 10 V; I_D = 25 A; T_j = 25 °C;
Fig. 14
Dynamic characteristics
Q_GD
Q_G(tot)
gate-drain charge
total gate charge
V_GS = 10 V; I_D = 75 A; V_DS = 20 V;
T_j = 25 °C; Fig. 15; Fig. 16
Min Typ Max Unit
-
-
40
V
[1]
-
-
150 A
-
-
338 W
-
[2]
-
1.9 2.3 mΩ
1.3 1.6 mΩ
-
32
-
nC
-
136 -
nC
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