PSMN165-200K Datasheet, PDF (9/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
PSMN165-200K
N-channel TrenchMOS SiliconMAX standard level FET
7. Package outline
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
y
Z
8
c
5
E
A
X
H_E
vM A
pin 1 index
1
e
A₂
A₁
4
b_p
wM
Q
(A ₃)
A
θ
L_p
L
detail X
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
UNIT _max. A₁
A₂
A₃
b_p
c
D⁽¹⁾ E⁽²⁾
e
H_E
L
L_p
Q
v
w
y
Z ⁽¹⁾
θ
mm
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
1.27
6.2
5.8
1.05
1.0
0.4
0.7
0.6
0.25 0.25
0.1
0.7
0.3
8^o
inches
0.069
0.010
0.004
0.057
0.049
0.01
0.019 0.0100
0.014 0.0075
0.20
0.19
0.16
0.15
0.05
0.244
0.228
0.041
0.039
0.016
0.028
0.024
0.01
0.01
0.004
0.028
0.012
0^o
Notes
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
OUTLINE
VERSION
SOT96-1
IEC
076E03
REFERENCES
JEDEC
JEITA
MS-012
EUROPEAN
PROJECTION
ISSUE DATE
99-12-27
03-02-18
Fig 15. Package outline SOT96-1 (SO8)
PSMN165-200K_2
Product data sheet
Rev. 02 — 3 December 2009
© NXP B.V. 2009. All rights reserved.
9 of 12