PSMN165-200K Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
PSMN165-200K
N-channel TrenchMOS SiliconMAX standard level FET
0.3
R _DSon
(Ω)
0.25
V_GS = 4 V
4.5 V
03ae08
T_j = 25 °C
0.2
5V
10 V
0.15
0.1
0
5
10
15 _{ID (A)} 20
3
03aa31
a
2
1
0
-60
0
60
120
180
T_j (°C)
Fig 9. Drain-source on-state resistance as a function Fig 10. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
10
V_GS
(V)
8
I_D = 3 A
T_j = 25 °C
6
03ae13
V_DD = 40 V 100 V 160 V
10⁴
Ciss ,
Coss ,
Crss
(pF)
10³
03ae12
Ciss
4
10²
Coss
Crss
2
0
0
15
30 _{QG (nC)} 45
1010_−1
1
10
10²
V_DS (V)
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN165-200K_2
Product data sheet
Rev. 02 — 3 December 2009
© NXP B.V. 2009. All rights reserved.
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