PSMN165-200K Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

PSMN165-200K
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 02 — 3 December 2009
Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
„ Computer motherboards
„ DC-to-DC convertors
„ Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 150 °C
I_D
drain current
T_sp = 80 °C;
see Figure 1 and 3
P_tot
total power
dissipation
T_sp = 80 °C;
see Figure 2
Dynamic characteristics
Q_GD
gate-drain charge V_GS = 10 V; I_D = 3 A;
V_DS = 100 V; T_j = 25 °C;
see Figure 11
Static characteristics
R_DSon
drain-source
on-state resistance
V_GS = 10 V; I_D = 2.5 A;
T_j = 25 °C;
see Figure 9 and 10
Min Typ Max Unit
-
-
200 V
-
-
2.9 A
-
-
3.5 W
-
12 16.5 nC
-
130 165 mΩ