PSMN165-200K Datasheet, PDF (4/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
PSMN165-200K
N-channel TrenchMOS SiliconMAX standard level FET
5. Thermal characteristics
Table 5.
Symbol
R_th(j-sp)
Thermal characteristics
Parameter
Conditions
thermal resistance from mounted on a metal clad substrate;
junction to solder point see Figure 4
Min Typ Max Unit
-
-
20
K/W
10²
Z_th(j-sp)
(K/W)
10 δ = 0.5
0.2
0.1
1 ^0.05
0.02
10^−1 _{single pulse}
10^−2
10^−4
10^−3
10^−2
10^−1
03ae05
P
δ = ^tp
T
t_p
t
T
1
10
10²
t_p (s)
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
PSMN165-200K_2
Product data sheet
Rev. 02 — 3 December 2009
© NXP B.V. 2009. All rights reserved.
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