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PSMN165-200K Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor
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NXP Semiconductors
PSMN165-200K
N-channel TrenchMOS SiliconMAX standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
V(BR)DSS drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
gfs
transfer conductance
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS= VGS; Tj = 150 °C;
see Figure 8
ID = 1 mA; VDS= VGS; Tj = -55 °C;
see Figure 8
ID = 1 mA; VDS= VGS; Tj = 25 °C;
see Figure 8
VDS = 160 V; VGS = 0 V; Tj = 25 °C
VDS = 200 V; VGS = 0 V; Tj = 150 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 2.5 A; Tj = 150 °C;
see Figure 9 and 10
VGS = 10 V; ID = 2.5 A; Tj = 25 °C;
see Figure 9 and 10
ID = 3 A; VDS = 100 V; VGS = 10 V;
Tj = 25 °C; see Figure 11
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 12
VDS = 100 V; RL = 100 Ω; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
VDS = 15 V; ID = 2.9 A; Tj = 25 °C;
see Figure 13
IS = 2.3 A; VGS = 0 V; Tj = 25 °C;
see Figure 14
IS = 2.9 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 25 V; Tj = 25 °C
Min Typ Max Unit
200 240 -
V
1.2 -
-
V
-
-
6
V
2
-
4
V
-
-
1
µA
-
-
0.5 mA
-
-
100 nA
-
-
100 nA
-
325 413 mΩ
-
130 165 mΩ
-
40
-
nC
-
4.5 -
nC
-
12
16.5 nC
-
1330 -
pF
-
140 -
pF
-
70
-
pF
-
12
25
ns
-
11
25
ns
-
50
80
ns
-
25
40
ns
-
10
-
S
-
0.7 1.1 V
-
105 -
ns
-
0.45 -
µC
PSMN165-200K_2
Product data sheet
Rev. 02 — 3 December 2009
© NXP B.V. 2009. All rights reserved.
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