PSMN165-200K Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
PSMN165-200K
N-channel TrenchMOS SiliconMAX standard level FET
20
I_D
(A)
15
10
03ae07
V_GS = 10 V 5 V
4.5 V
20
ID
(A)
V_DS> I_D X R_DSon
15
10
03ae09
5
4V
3.5 V
0
0
1
2
3
4
5
V_DS (V)
5
T_j = 150 °C
25 °C
00
1
2
3
4
5
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
10^−1
I_D
(A)
10^−2
03aa35
min typ max
5
V_GS(th)
(V)
4
max
03aa32
10^−3
3
typ
10^−4
2
min
10^−5
1
10^−6
0
2
4
6
V_GS (V)
0
−60
0
60
120
180
T_j (°C)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Gate-source threshold voltage as a function of
junction temperature
PSMN165-200K_2
Product data sheet
Rev. 02 — 3 December 2009
© NXP B.V. 2009. All rights reserved.
6 of 12