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PSMN165-200K Datasheet, PDF (3/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor
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NXP Semiconductors
120
Ider
(%)
80
PSMN165-200K
N-channel TrenchMOS SiliconMAX standard level FET
03aa25
120
Pder
(%)
80
03aa17
40
40
0
0
50
100
150
200
Tsp (°C)
0
0
50
100
150
200
Tsp (°C)
Fig 1. Normalized continuous drain current as a
function of solder point temperature
102
ID
(A)
RDSon = VDS/ID
10
1
P
10−1
tp
δ=
T
tp
t
T
10−2
1
D.C.
10
Fig 2. Normalized total power dissipation as a
function of solder point temperature
03ae06
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
102
103
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN165-200K_2
Product data sheet
Rev. 02 — 3 December 2009
© NXP B.V. 2009. All rights reserved.
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