PSMN165-200K Datasheet, PDF (8/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
PSMN165-200K
N-channel TrenchMOS SiliconMAX standard level FET
30
g_fs
(S)
25
V_DS > I_D X R_DSon
Tj = 25 °C
20
150 °C
15
10
5
00
5
10
03ae10
15
20
I_D (A)
20
IS ^{VGS = 0 V}
(A)
15
03ae11
10
5
T_j = 150 °C
25 °C
00
0.2
0.4
0.6
0.8
1
V_SD (V)
Fig 13. Forward transconductance as a function of
drain current; typical values
Fig 14. Source current as a function of source-drain
voltage; typical values
PSMN165-200K_2
Product data sheet
Rev. 02 — 3 December 2009
© NXP B.V. 2009. All rights reserved.
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