PSMN003-30P Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
PSMN003-30P
N-channel TrenchMOS intermediate level FET
100
I_S
(A)
V_GS = 0 V
80
175 °C
60
40
03af54
T_j = 25 °C
20
00.0
0.5
1.0 _{VSD (V)} 1.5
Fig 13. Source current as a function of source-drain voltage; typical values
PSMN003-30P_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 February 2010
© NXP B.V. 2010. All rights reserved.
9 of 14