PSMN003-30P Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
PSMN003-30P
N-channel TrenchMOS intermediate level FET
400
I_D
(A)
350
300
V_GS = 10 V 7 V 5.2 V
5V
15 V
20 V
250
200
150
100
50
00
0.5
1
1.5
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T_j = 25 °C
4.8 V
4.6 V
4.4 V
4.2 V
4V
3.8 V
3.6 V
3.4 V
2
2.5
V_DS (V)
100
I_D
(A)
80
V_DS > I_D x R_DSon
175 °C
60
40
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T_j = 25 °C
20
0
0
1
2
3
4
5
6
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
1
I_D
(A)
10^-1
10^-2
10^-3
10^-4
10^-5
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min
typ
max
4
V_GS(th)
(V)
3
2
1
03af65
max
typ
min
10^-6
0
1
2
3
4
V_GS (V)
0
-60
20
100
180
T_j (°C)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Gate-source threshold voltage as a function of
junction temperature
PSMN003-30P_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 February 2010
© NXP B.V. 2010. All rights reserved.
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