PSMN003-30P Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
PSMN003-30P
N-channel TrenchMOS intermediate level FET
0.006
R_DSon
(Ω)
0.005
3.8 V 4 V 4.2 V 4.4 V 4.6 V 4.8 V
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0.004
0.003
0.002
0.001
0
0
5V
5.2 V
6V
10 V
15 V
V_GS = 20 V
T_j = 25 °C
100
200
300
400
500
I_D (A)
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2
a
1.5
1
0.5
0
-60
0
60
120
180
T_j (°C)
Fig 9. Drain-source on-state resistance as a function Fig 10. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
12
V_GS
(V)
10
8
6
I_D = 75 A
V_DD = 15 V
T_j = 25 °C
4
2
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10⁵
C
(pF)
10⁴
10³
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C_iss
C_oss
C_rss
00
50
100
150
200
Q_G (nC)
10²
10^−1
1
10 _{VDS (V)} 10²
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN003-30P_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 February 2010
© NXP B.V. 2010. All rights reserved.
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