PSMN003-30P Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

PSMN003-30P
N-channel TrenchMOS intermediate level FET
Rev. 02 — 25 February 2010
Product data sheet
1. Product profile
1.1 General description
SiliconMAX intermediate level N-channel enhancement mode Field-Effect Transistor
(FET) in a plastic package using TrenchMOS technology. This product is designed and
qualified for use in computing, communications, consumer and industrial applications
only.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
„ High frequency computer motherboard
DC-to-DC convertors
„ OR-ing applications
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V;
see Figure 1 and 3
-
-
30 V
-
-
75 A
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
-
-
230 W
Dynamic characteristics
Q_GD
gate-drain charge V_GS = 10 V; I_D = 75 A;
V_DS = 15 V; T_j = 25 °C;
see Figure 11
-
45 -
nC
Static characteristics
R_DSon drain-source
V_GS = 5 V; I_D = 25 A; T_j = 25 °C; -
on-state resistance see Figure 9 and 10
3.3 4
mΩ
V_GS = 10 V; I_D = 25 A; T_j = 25 °C; -
see Figure 9 and 10
2.4 2.8 mΩ