 English |
|
|
|
|
|
|
|
| PSMN003-30P Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor | |||
| |||
| ◁ |
NXP Semiconductors
PSMN003-30P
N-channel TrenchMOS intermediate level FET
103
ID
(A)
RDSon = VDS/ID
102
10 P
tp
δ=
T
tp
t
T
1
1
tp = 10 μs
100 µs
03af49
1 ms
DC
10 ms
100 ms
10
102
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN003-30P_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 25 February 2010
© NXP B.V. 2010. All rights reserved.
4 of 14
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese