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PSMN003-30P Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor
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NXP Semiconductors
PSMN003-30P
N-channel TrenchMOS intermediate level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Min
Static characteristics
V(BR)DSS drain-source
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
27
breakdown voltage
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
30
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 8 1
voltage
ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 8 0.4
ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 8 -
IDSS
drain leakage current VDS = 30 V; VGS = 0 V; Tj = 175 °C
-
VDS = 30 V; VGS = 0 V; Tj = 25 °C
-
IGSS
gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 175 °C; see Figure 9 -
resistance
and 10
VGS = 5 V; ID = 25 A; Tj = 25 °C; see Figure 9
-
and 10
VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 9 -
and 10
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
ID = 75 A; VDS = 15 V; VGS = 10 V; Tj = 25 °C;
-
gate-source charge
see Figure 11
-
gate-drain charge
-
input capacitance
VDS = 25 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
-
output capacitance
see Figure 12
-
reverse transfer
-
capacitance
td(on)
turn-on delay time
VDS = 15 V; RL = 1.25 Ω; VGS = 10 V;
-
tr
rise time
RG(ext) = 6 Ω; Tj = 25 °C
-
td(off)
turn-off delay time
-
tf
fall time
-
Source-drain diode
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 13 -
Typ Max Unit
-
-
V
-
-
V
2
3
V
-
-
V
-
3.4 V
-
500 µA
0.02 1
µA
10
100 nA
10
100 nA
4.32 5
mΩ
3.3 4
mΩ
2.4 2.8 mΩ
170 -
nC
44
-
nC
45
-
nC
9200 -
pF
1930 -
pF
1300 -
pF
33
-
ns
66
-
ns
210 -
ns
115 -
ns
0.85 1.2 V
PSMN003-30P_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 February 2010
© NXP B.V. 2010. All rights reserved.
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