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PSMN003-30P Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor
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NXP Semiconductors
PSMN003-30P
N-channel TrenchMOS intermediate level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to mounting see Figure 4
base
thermal resistance from junction to ambient vertical in still air
Min Typ Max Unit
-
-
0.65 K/W
-
60
-
K/W
1
03af48
Zth(j-mb)
(K/W)
10−1
δ = 0.5
0.2
0.1
0.05
0.02
10−2
P
tp
δ=
T
Fig 4.
single pulse
10−3
10−6
10−5
10−4
10−3
10−2
10−1
tp
t
T
1
10
tp (s)
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN003-30P_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 February 2010
© NXP B.V. 2010. All rights reserved.
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