 English |
|
|
|
|
|
|
|
| PSMN003-30P Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor | |||
| |||
| ◁ |
NXP Semiconductors
PSMN003-30P
N-channel TrenchMOS intermediate level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
IDM
Ptot
Tstg
Tj
VGSM
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak gate-source
voltage
Tj ⥠25 °C; Tj ⤠175 °C
Tj ⥠25 °C; Tj ⤠175 °C; RGS = 20 kâ¦
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1 and 3
tp ⤠10 µs; pulsed; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
pulsed; tp ⤠50 µs; δ = 25 %; Tj ⤠150 °C
Source-drain diode
IS
source current
ISM
peak source current
Avalanche ruggedness
Tmb = 25 °C
tp ⤠10 µs; pulsed; Tmb = 25 °C
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 75 A; Vsup = 15 V;
drain-source avalanche unclamped; tp = 0.1 ms; RGS = 50 â¦
energy
IAS
non-repetitive
Vsup = 15 V; VGS = 10 V; Tj(init) = 25 °C;
avalanche current
RGS = 50 â¦; unclamped
Min Max Unit
-
30
V
-
30
V
-20 20
V
-
75
A
-
75
A
-
400 A
-
230 W
-55 175 °C
-55 175 °C
-25 25
V
-
75
A
-
400 A
-
500 mJ
-
75
A
120
Ider
(%)
100
03af36
80
60
40
20
00
30
60
90 120 150 180
Tmb (°C)
120
Pder
(%)
80
03aa16
40
0
0
50
100
150
200
Tmb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN003-30P_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 25 February 2010
© NXP B.V. 2010. All rights reserved.
3 of 14
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese