PMDXB600UNE Datasheet, PDF (9/15 Pages) NXP Semiconductors – 20 V, dual N-channel Trench MOSFET

NXP Semiconductors
PMDXB600UNE
20 V, dual N-channel Trench MOSFET
5
V_GS
(V)
4
aaa-009006
3
2
1
0
0
0.1
0.2
0.3
0.4
0.5
Q_G (nC)
I_D = 0.6 A; V_DS = 10 V; T_amb = 25 °C
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
2.5
I_S
(A)
2.0
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
017aaa137
Fig. 16. MOSFET transistor: Gate charge waveform
definitions
aaa-009007
1.5
1.0
0.5
T_j = 150 °C
T_j = 25 °C
V_GS = 0 V
0
0
0.4
0.8
1.2
1.6
2.0
V_SD (V)
Fig. 17. Source current as a function of source-drain voltage; typical values
11. Test information
P
t₂
duty cycle δ =
t₁
t₂
t₁
Fig. 18. Duty cycle definition
PMDXB600UNE
Product data sheet
t
006aaa812
All information provided in this document is subject to legal disclaimers.
16 September 2013
© NXP N.V. 2013. All rights reserved
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