PMDXB600UNE Datasheet, PDF (2/15 Pages) NXP Semiconductors – 20 V, dual N-channel Trench MOSFET

NXP Semiconductors
PMDXB600UNE
20 V, dual N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
S1
source TR1
2
G1
gate TR1
3
D2
drain TR2
4
S2
source TR2
5
G2
gate TR2
6
D1
drain TR1
7
D1
drain TR1
8
D2
drain TR2
Simplified outline
1
6
7
2
5
Graphic symbol
D1
G1
8
3
4
S1
Transparent top view
DFN1010B-6 (SOT1216)
D2
G2
S2
017aaa256
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMDXB600UNE
DFN1010B-6
Description
plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals
Version
SOT1216
7. Marking
Table 4. Marking codes
Type number
PMDXB600UNE
MARKING CODE
(EXAMPLE)
Marking code
00 10 00
READING
DIRECTION
MARK-FREE AREA
PIN 1
INDICATION MARK
READING EXAMPLE:
11
01
10
aaa-007665
Fig. 1. DFN1010B-6 (SOT1216) binary marking code description
PMDXB600UNE
All information provided in this document is subject to legal disclaimers.
Product data sheet
16 September 2013
VENDOR CODE
YEAR DATE
CODE
© NXP N.V. 2013. All rights reserved
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