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| PMDXB600UNE Datasheet, PDF (3/15 Pages) NXP Semiconductors – 20 V, dual N-channel Trench MOSFET | |||
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NXP Semiconductors
PMDXB600UNE
20 V, dual N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per transistor
VDS
drain-source voltage
Tj = 25 °C
VGS
gate-source voltage
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
[1]
VGS = 4.5 V; Tamb = 100 °C
[1]
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ⤠10 µs
Ptot
total power dissipation
Tamb = 25 °C
[2]
[1]
Tsp = 25 °C
Source-drain diode
IS
source current
Tamb = 25 °C
[1]
Per device
Tj
junction temperature
Tamb
ambient temperature
Tstg
storage temperature
Min Max Unit
-
20
V
-8
8
V
-
600 mA
-
400 mA
-
2.5 A
-
265 mW
-
380 mW
-
4025 mW
-
0.4 A
-55 150 °C
-55 150 °C
-65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
PMDXB600UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
16 September 2013
© NXP N.V. 2013. All rights reserved
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