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PMDXB600UNE Datasheet, PDF (4/15 Pages) NXP Semiconductors – 20 V, dual N-channel Trench MOSFET
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NXP Semiconductors
120
Pder
(%)
80
017aaa001
PMDXB600UNE
20 V, dual N-channel Trench MOSFET
120
Ider
(%)
80
017aaa002
40
40
0
- 75
- 25
25
75
125
175
Tamb (°C)
Fig. 2. Normalized total power dissipation as a
function of ambient temperature
0
- 75
- 25
25
75
125
175
Tamb (°C)
Fig. 3. Normalized continuous drain current as a
function of ambient temperature
10
ID
(A)
1
Limit RDSon = VDS/ID
aaa-008997
tp = 10 µs
tp = 100 µs
10-1
DC; Tsp = 25 °C
DC; Tamb = 25 °C;
drain mounting pad 1 cm2
tp = 1 ms
tp = 10 ms
tp = 100 ms
10-2
10-1
1
IDM = single pulse
10
102
VDS (V)
Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Per transistor
Rth(j-a)
thermal resistance
in free air
[1]
from junction to
[2]
ambient
PMDXB600UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
16 September 2013
Min Typ Max Unit
-
410 475 K/W
-
285 330 K/W
© NXP N.V. 2013. All rights reserved
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