PMDXB600UNE Datasheet, PDF (7/15 Pages) NXP Semiconductors – 20 V, dual N-channel Trench MOSFET

NXP Semiconductors
PMDXB600UNE
20 V, dual N-channel Trench MOSFET
2.5
I_D
(A)
2.0
1.5
4.5 V
aaa-008998
2.5 V
10^-3
I_D
(A)
10^-4
aaa-008999
min typ
max
1.0
1.8 V
10^-5
0.5
1.5 V
0
0
1
T_j = 25 °C
V_GS = 1.2 V
2
3
4
V_DS (V)
10^-6
0
0.5
T_j = 25 °C; V_DS = 5 V
1.0
1.5
V_GS (V)
Fig. 7. Output characteristics: drain current as a
Fig. 8. Sub-threshold drain current as a function of
function of drain-source voltage; typical values
gate-source voltage
3
aaa-009000
3
1.5 V
2V
aaa-009001
R_DSon
(Ω) _{1.2 V}
1.8 V
2.5 V
R_DSon
(Ω)
2
2
3V
1
1
T_j = 150 °C
V_GS = 4.5 V
0
0
0.5
1.0
1.5
2.0
2.5
I_D (A)
T_j = 25 °C
Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
T_j = 25 °C
0
0
1
2
3
4
5
V_GS (V)
I_D = 0.6 A
Fig. 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMDXB600UNE
Product data sheet
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16 September 2013
© NXP N.V. 2013. All rights reserved
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