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PMDXB600UNE Datasheet, PDF (5/15 Pages) NXP Semiconductors – 20 V, dual N-channel Trench MOSFET
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NXP Semiconductors
PMDXB600UNE
20 V, dual N-channel Trench MOSFET
Symbol
Rth(j-sp)
103
Parameter
Conditions
thermal resistance
from junction to solder
point
Min Typ Max Unit
-
27
31
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
aaa-006902
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0
0.01
10
10-3
10-2
10-1
1
FR4 PCB, standard footprint
10
102
103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
aaa-006903
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
102 0.25
0.33
0.2
0.1
0.05
0.02
0
0.01
10
10-3
10-2
10-1
1
FR4 PCB, mounting pad for drain 1 cm2
10
102
103
tp (s)
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMDXB600UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
16 September 2013
© NXP N.V. 2013. All rights reserved
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