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PMDXB600UNE Datasheet, PDF (6/15 Pages) NXP Semiconductors – 20 V, dual N-channel Trench MOSFET
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NXP Semiconductors
PMDXB600UNE
20 V, dual N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics (per transistor)
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS
drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C
IGSS
gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C
VGS = -8 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state
resistance
VGS = 4.5 V; ID = 600 mA; Tj = 25 °C
VGS = 4.5 V; ID = 600 mA; Tj = 150 °C
VGS = 2.5 V; ID = 500 mA; Tj = 25 °C
VGS = 1.8 V; ID = 100 mA; Tj = 25 °C
VGS = 1.5 V; ID = 10 mA; Tj = 25 °C
VGS = 1.2 V; ID = 1 mA; Tj = 25 °C
gfs
forward
VDS = 5 V; ID = 0.6 A; Tj = 25 °C
transconductance
Dynamic characteristics (per transistor)
QG(tot)
QGS
total gate charge
gate-source charge
VDS = 10 V; ID = 600 mA; VGS = 4.5 V;
Tj = 25 °C
QGD
gate-drain charge
Ciss
input capacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Coss
output capacitance
Tj = 25 °C
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 10 V; ID = 600 mA; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
td(off)
turn-off delay time
tf
fall time
Source-drain diode (per transistor)
VSD
source-drain voltage IS = 0.36 A; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
20
-
-
V
0.45 0.7 0.95 V
-
-
1
µA
-
-
10
µA
-
-
-10 µA
-
-
1
µA
-
-
-1
µA
-
470 620 mΩ
-
760 1000 mΩ
-
620 850 mΩ
-
845 1300 mΩ
-
1125 3000 mΩ
-
2210 -
mΩ
-
1
-
S
-
0.4 0.7 nC
-
0.1 -
nC
-
0.1 -
nC
-
21.3 -
pF
-
5.4 -
pF
-
4.2 -
pF
-
5.6 -
ns
-
9.2 -
ns
-
19
-
ns
-
51
-
ns
-
0.8 1.2 V
PMDXB600UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
16 September 2013
© NXP N.V. 2013. All rights reserved
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