PMDXB600UNE Datasheet, PDF (8/15 Pages) NXP Semiconductors – 20 V, dual N-channel Trench MOSFET

NXP Semiconductors
PMDXB600UNE
20 V, dual N-channel Trench MOSFET
2.5
I_D
(A)
2.0
1.5
1.0
T_j = 150 °C T_j = 25 °C
0.5
aaa-009002
2.0
a
1.5
1.0
0.5
aaa-009003
0
0
1
2
3
4
5
V_GS (V)
V_DS > I_D × R_DSon
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
-60
0
60
120
180
T_j (°C)
Fig. 12. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
1.5
V_GS(th)
(V)
1.0
aaa-009004
10²
C
(pF)
aaa-009005
C_iss
max
10
0.5
typ
C_oss
C_rss
min
0
-60
0
60
I_D = 0.25 mA; V_DS = V_GS
120
180
T_j (°C)
Fig. 13. Gate-source threshold voltage as a function of
junction temperature
1
10^-1
1
f = 1 MHz; V_GS = 0 V
10
10²
V_DS (V)
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMDXB600UNE
Product data sheet
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16 September 2013
© NXP N.V. 2013. All rights reserved
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