SI4410DY Datasheet, PDF (8/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
SI4410DY
N-channel TrenchMOS logic level FET
40
g_fs
(S)
30
V_DS > I_D x R_DSon
20
03ae24
T_j = 25 °C
150 °C
10
0
0
10
20
30
40
50
I_D (A)
50
I_S
(A)
V_GS = 0 V
40
03ad53
30
20
10
0
0
150 °C
0.4
T_j = 25 °C
0.8
1.2
1.6
V_SD (V)
Fig 13. Forward transconductance as a function of
drain current; typical values
Fig 14. Source current as a function of source-drain
voltage; typical values
SI4410DY_3
Product data sheet
Rev. 03 — 4 December 2009
© NXP B.V. 2009. All rights reserved.
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