SI4410DY Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
SI4410DY
N-channel TrenchMOS logic level FET
50
I_D
(A)
40
30
20
10
0
0
10 V 5 V
03ad50
3.8 V
3.6 V
3.4 V
3.2 V
3V
2.8 V
V_GS = 2.6 V
0.5
1 _{VDS (V)} 1.5
50
I_D
(A)
40
V_DS > I_D x R _DSon
03ad52
30
20
10
0
0
T_j = 150 °C
1
2
25 °C
3 _{VGS (V)} 4
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
10^-1
I_D
(A)
10^-2
03aa36
10⁴
C
(pF)
03ad54
10^-3
min
typ
max
10³
10^-4
10^-5
C_iss
C_oss
C_rss
10^-6
0
1
2
3
V_GS (V)
10
10^−1
1
10
10²
V_DS (V)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
SI4410DY_3
Product data sheet
Rev. 03 — 4 December 2009
© NXP B.V. 2009. All rights reserved.
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