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SI4410DY Datasheet, PDF (3/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor
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NXP Semiconductors
120
Ider
(%)
80
03aa19
SI4410DY
N-channel TrenchMOS logic level FET
120
Pder
(%)
80
03aa11
40
40
0
0
50
100
150
200
Tamb (°C)
0
0
50
100
150
200
Tamb (°C)
Fig 1. Normalized continuous drain current as a
function of ambient temperature
102
ID
(A)
RDSon = VDS/ID
10
1
P
10−1
tp
δ=
T
tp
t
T
10−2
10−1
D.C.
1
Fig 2. Normalized total power dissipation as a
function of ambient temperature
tp = 10 µs
03ae23
1 ms
10 ms
100 ms
10 s
10
102
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
SI4410DY_3
Product data sheet
Rev. 03 — 4 December 2009
© NXP B.V. 2009. All rights reserved.
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