SI4410DY Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
SI4410DY
N-channel TrenchMOS logic level FET
2.5
V_GS(th)
(V)
2
1.5
1
03aa33
max
typ
min
0.5
0
-60
0
60
120
180
T_j (°C)
0.03
R_DSon
(Ω)
3.4 V
T_j = 25 °C V_GS = 3.2 V
03ad51
3.6 V 3.8 V
0.02
4.5 V
5V
10 V
0.01
0
0
10
20
30
40
50
I_D (A)
Fig 9. Gate-source threshold voltage as a function of Fig 10. Drain-source on-state resistance as a function
junction temperature
of drain current; typical values
2
03ad57
10
03ad55
a
V_GS
I_D = 10 A
(V)
1.5
8 _{VDD = 15 V}
T_j = 25 ºC
6
1
4
0.5
2
0
−60
0
60
120
180
T_j (°C)
0
0
10
20
30
Q_G
40
(nC)
Fig 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 12. Gate-source voltage as a function of gate
charge; typical values
SI4410DY_3
Product data sheet
Rev. 03 — 4 December 2009
© NXP B.V. 2009. All rights reserved.
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