SI4410DY Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

SI4410DY
N-channel TrenchMOS logic level FET
Rev. 03 — 4 December 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
„ DC motor control
„ DC-to-DC convertors
„ Lithium-ion battery applications
„ Notebook computers
„ Portable equipment
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 150 °C
I_D
drain current
T_amb = 25 °C; pulsed;
see Figure 1 and 3
P_tot
total power
dissipation
T_amb = 25 °C; pulsed;
see Figure 2
Dynamic characteristics
Q_GD
gate-drain charge V_GS = 10 V; I_D = 10 A;
V_DS = 15 V; T_j = 25 °C;
see Figure 12
Static characteristics
R_DSon
drain-source
on-state resistance
V_GS = 4.5 V; I_D = 5 A;
T_j = 25 °C;
see Figure 10 and 11
V_GS = 10 V; I_D = 10 A;
T_j = 25 °C;
see Figure 10 and 11
Min Typ Max Unit
-
-
30 V
-
-
10 A
-
-
2.5 W
-
7
-
nC
-
15 20 mΩ
-
11 13.5 mΩ