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SI4410DY Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor
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NXP Semiconductors
SI4410DY
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
VGS(th)
gate-source threshold
voltage
IDSS
drain leakage current
IGSS
gate leakage current
RDSon
drain-source on-state
resistance
IDSon
on-state drain-source
current
Dynamic characteristics
QG(tot)
total gate charge
QGS
QGD
td(on)
tr
td(off)
tf
gfs
gate-source charge
gate-drain charge
turn-on delay time
rise time
turn-off delay time
fall time
transfer conductance
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Conditions
ID = 250 µA; VDS= VGS; Tj = 25 °C;
see Figure 9
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 55 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 5 A; Tj = 25 °C;
see Figure 10 and 11
VGS = 10 V; ID = 10 A; Tj = 25 °C;
see Figure 10 and 11
VDS ≥ 5 V; VGS = 10 V
ID = 10 A; VDS = 15 V; VGS = 5 V;
Tj = 25 °C; see Figure 12
ID = 10 A; VDS = 15 V; VGS = 10 V;
Tj = 25 °C; see Figure 12
VDS = 25 V; RL = 25 Ω; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
VDS = 15 V; ID = 10 A; Tj = 25 °C;
see Figure 13
IS = 2.3 A; VGS = 0 V; Tj = 25 °C;
see Figure 14
IS = 2.3 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 25 V; Tj = 25 °C
Min Typ Max Unit
1
-
-
V
-
-
1
µA
-
-
25
µA
-
-
100 nA
-
-
100 nA
-
15
20
mΩ
-
11
13.5 mΩ
20
-
-
A
-
21.5 34
nC
-
40
60
nC
-
8
-
nC
-
7
-
nC
-
13.5 30
ns
-
9
20
ns
-
70
100 ns
-
30
80
ns
-
34
-
S
-
0.7 1.1 V
-
50
80
ns
SI4410DY_3
Product data sheet
Rev. 03 — 4 December 2009
© NXP B.V. 2009. All rights reserved.
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