SI4410DY Datasheet, PDF (4/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
SI4410DY
N-channel TrenchMOS logic level FET
5. Thermal characteristics
Table 5.
Symbol
R_th(j-sp)
R_th(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from
junction to solder point
thermal resistance from mounted on a printed-circuit board;
junction to ambient
minimum footprint; tp ≤ 10 s;
see Figure 4
Min Typ Max Unit
-
-
-
K/W
-
-
50
K/W
10²
Z_th(j-amb) ^{δ = 0.5}
(K/W)
0.2
10 _0.1
0.05
0.02
1
03ad49
10^−1
single pulse
10^−2
10^−4
10^−3
10^−2
10^−1
1
P
t_p
δ=
T
t_p
t
T
10
10^{2 t}p ^(s)
10³
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
SI4410DY_3
Product data sheet
Rev. 03 — 4 December 2009
© NXP B.V. 2009. All rights reserved.
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