PSMN1R8-30PL Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220

NXP Semiconductors
PSMN1R8-30PL
N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220
2
a
03aa27
1.5
1
0.5
0
−60
0
60
120 _{Tj (°C)} 180
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
10
V_GS
(V)
8
24 V
003aad398
6V
6
V_DS = 15 V
4
2
Fig 14. Gate charge waveform definitions
10⁵
C
(pF)
10⁴
003aad399
C_iss
C_oss
10³
C_rss
0
0
50
100
150
200
Q_G (nC)
10²
10^-1
1
10
V_DS (V) ¹⁰²
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN1R8-30PL_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 18 February 2010
© NXP B.V. 2010. All rights reserved.
8 of 14