PSMN1R8-30PL Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220

NXP Semiconductors
PSMN1R8-30PL
N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220
300
I_D
(A)
200
(1)
100
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120
P_der
(%)
80
40
03aa16
0
0
50
100
150
200
T_mb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
10⁴
I_D
(A)
10³
Limit R_DSon = V_DS / I_D
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
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10 μs
10²
10
1
10^-1
(1)
DC
100 μs
1 ms
10 ms
100 ms
1
10
V_DS (V)
10²
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN1R8-30PL_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 18 February 2010
© NXP B.V. 2010. All rights reserved.
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