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PSMN1R8-30PL Datasheet, PDF (2/14 Pages) NXP Semiconductors – N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220
NXP Semiconductors
2. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
G
gate
2
D
drain
3
S
source
mb
D
mounting base; connected to
drain
PSMN1R8-30PL
N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78 (TO-220AB)
Table 3. Ordering information
Type number
Package
Name
Description
Version
PSMN1R8-30PL TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
TO-220AB
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
Tj ≥ 25 °C; Tj ≤ 175 °C
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
VGS = 10 V; Tmb = 100 °C; see Figure 1
[1]
VGS = 10 V; Tmb = 25 °C; see Figure 1
[1]
tp ≤ 10 µs; pulsed; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS
source current
Tmb = 25 °C;
[1]
ISM
peak source current
tp ≤ 10 µs; pulsed; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
avalanche energy
Vsup ≤ 30 V; RGS = 50 Ω; unclamped
[1] Continuous current is limited by package.
PSMN1R8-30PL_1
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 18 February 2010
Min Max Unit
-
30
V
-
30
V
-20 20
V
-
100 A
-
100 A
-
1120 A
-
270 W
-55 175 °C
-55 175 °C
-
100 A
-
1120 A
-
1.1 J
© NXP B.V. 2010. All rights reserved.
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