PSMN1R8-30PL Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220

PSMN1R8-30PL
N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220
Rev. 01 — 18 February 2010
Objective data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in TO-220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ High efficiency due to low switching
and conduction losses
„ Suitable for logic level gate drive
sources
1.3 Applications
„ DC-to-DC converters
„ Load switching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
-
-
30 V
I_D
drain current
T_mb = 25 °C; V_GS = 10 V;
[1] _-
-
100 A
see Figure 1
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
-
-
270 W
T_j
junction temperature
Avalanche ruggedness
-55 -
175 °C
E_DS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
V_GS = 10 V; T_j(init) = 25 °C;
I_D = 100 A; V_sup ≤ 30 V;
R_GS = 50 Ω; unclamped
-
-
1.1 J
Q_GD
Q_G(tot)
gate-drain charge
total gate charge
V_GS = 4.5 V; I_D = 25 A;
V_DS = 15 V; see Figure 14
and 15
-
22 -
nC
-
83 -
nC
Static characteristics
R_DSon
drain-source
on-state resistance
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 13
and 12
[2] _-
1.5 1.8 mΩ
[1] Continuous current is limited by package.
[2] Measured 3 mm from package.